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High-Performance p-Type Transistor in Monolayer 2H-MoTe2
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DOI：10.1021/acs.jpcc.4c08418.png)
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Abstract
En 中文
We demonstrate a technique for the fabrication of p-type transistors based on monolayer molybdenum telluride (MoTe2). In the device structure, monolayer hexagonal boron nitride (hBN) protects the channel from oxidation and acts as a tunnel barrier for Pd contacts. P-doping is achieved through charge transfer from oxidized WSe2. The contacts show low resistance and Ohmic behavior down to cryogenic temperatures. The resulting FET mobility is the highest reported to date for monolayer MoTe2. This architecture can be utilized for electronic and optoelectronic applications of MoTe2 and will be useful for electrical transport studies of exotic quantum phenomena in MoTe2 twisted bilayers.
Keywords:
2-DIMENSIONAL MATERIALS
CARRIER MOBILITY
CONTACT
GRAPHENE
Journal
IF:
3.2
Papers:
5.6W
Citations:
15.0W