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High-Performance Two-Dimensional Electronics with a Noncontact Remote Doping Method
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DOI：10.1021/acsnano.3c00522.png)
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Abstract
En 中文
Because of the intrinsic low carrier density of monolayertwo-dimensional(2D) materials, doping is crucial for the performance of underlaptop-gated 2D devices. However, wet etching of a high-k (dielectric constant) dielectric layer is difficult to implementwithout causing performance deterioration on the devices; therefore,finding a suitable spacer doping technique for 2D devices is indispensable.In this study, we developed a remote doping (RD) method in which defectiveSiO( x ) can remotely dope the underlyinghigh-k capped 2D regions without directly contactingthese materials. This method achieved a doping density as high as1.4 x 10(13) cm(-2) without reducingthe mobility of the doped materials; after 1 month, the doping concentrationremained as high as 1.2 x 10(13) cm(-2). Defective SiO x can be used to dopemost popular 2D transition-metal dichalcogenides. The low-k properties of SiO x renderit ideal for spacer doping, which is very attractive from the perspectiveof circuit operation. In our experiments, MoS2 and WS2 underlap top-gate devices exhibited 10x and 200xincreases in their on-currents, respectively, after being doped withSiO (x) . These results indicate that SiO (x) doping can be conducted to manufacture high-performance2D devices.
Keywords:
two-dimensional materials
low-k materials
remote doping
defective SiO (x)
spacer doping
top-gate transistors
Journal
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16
Papers:
2.6W
Citations:
25.6W