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High-Responsivity Broadband Photodetector Based on WS2:Er/MoTe2 van der Waals Heterojunction
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DOI：10.1016/j.optmat.2026.118248.png)
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Abstract
En 中文
• The characteristics of WS2 following erbium ion doping were analyzed. • The photoelectric properties of WS2:Er/MoTe2 van der Waals heterojunction were investigated in detail. • The device designed in this work achieves broadband detection covering the visible to near-infrared spectral range. • First-principles calculations were employed to systematically analyze the band structure characteristics of WS2, MoTe2, and WS2:Er/MoTe2 van der Waals heterojunction.
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