High-Sensitivity AlGaN/GaN HFET Implantable Neural Probe Without Gate Control Enabled by Photoelectrochemical Etching

Yanyuan Ding

doi:10.3390/mi17080956

High-Sensitivity AlGaN/GaN HFET Implantable Neural Probe Without Gate Control Enabled by Photoelectrochemical Etching

2026-08-13

0

OA

AI

Y

Yanyuan Ding

X

Xin Cao

Y

Yang Li

X

Xien Yang

Y

Ye Wen

X

Xiaodong Li

X

Xilei Huang

Z

Zeyi Li

J

Jiefeng Weng

B

Baijun Zhang *

DOI：10.3390/mi17080956

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Implantable neural probes that can simultaneously possess biocompatibility, electrochemical stability, and high signal fidelity are the core devices in neuroelectrophysiological research. In this article, AlGaN/GaN heterojunction field-effect transistors are used instead of traditional metal microelectrodes to prepare brain nerve probes. By photoelectrochemical etching and optimization of sensing area size, the probes have the maximum transconductance value, i.e., the highest sensitivity, under no gate control. After digital filtering processing, the neural probe achieved a signal-to-noise ratio of 8.04 dB on biological analog signals as low as 50 µV, confirming its ability to detect microvolt-level signals. The ex vivo recording of the bullfrog sciatic nerve further validated its biosensing performance, demonstrating the selective capture of composite action potentials from active neural tissue.

Keywords:

neuroelectrophysiology

AlGaN/GaN heterojunction field-effect transistor

neural probe

photoelectrochemical etching

High-Sensitivity AlGaN/GaN HFET Implantable Neural Probe Without Gate Control Enabled by Photoelectrochemical Etching

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