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High-Sensitivity Single Crystal Silicon Pressure Scale for High-Pressure and High-Temperature Diamond Anvil Cell Experiments
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DOI：10.1021/acs.jpcc.6c00925.png)
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Abstract
En 中文
Accurate pressure calibration is critical for high-pressure and high-temperature experiments in diamond anvil cells. While cubic boron nitride (c-BN) is a common standard, its precision is often compromised at low pressures by broad and fluctuating Raman peaks. Here, we establish single-crystal silicon (SC-silicon) as a superior Raman-based pressure calibrator within the range of 0-10 GPa and 300-800 K. Systematic comparative measurements reveal that SC-silicon outperforms c-BN, featuring higher pressure sensitivity (similar to 4.65 vs similar to 3.2 cm-1/GPa), significantly narrower and more stable full width at half-maximum, and stronger signal intensity. Based on these data, we propose a high-precision empirical P-T calibration equation and advocate for a complementary dual validation strategy. To validate this scale, we revisited the phase diagram of manganotantalite. The results refine the phase transition pressure at 600 K from similar to 14.2 to similar to 12.7 GPa, yielding a more accurate Clapeyron slope. This work establishes SC-silicon as a reliable, high-sensitivity tool and a multifunctional calibrant for investigating inorganic solids under extreme conditions.
Keywords:
SITU RAMAN-SPECTROSCOPY
RUBY
SENSOR
Journal
IF:
3.2
Papers:
5.6W
Citations:
15.0W
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