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High-temperature ceramic pressure sensor

delete1997-05-01
delete24
PRE
AI
I
I. Ayerdi *
E
E. Castaño
A
A. García‐Alonso
J
José Gracia
DOI：10.1016/S0924-4247(96)01438-0delete
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Abstract

Abstract

En 中文
A pressure microsensor for working at high temperature has been developed. The device consists of a tantalum nitride thin film, patterned on a Wheatstone bridge configuration, sputter-deposited onto thermally oxidized silicon wafers with an aluminium interconnection layer and a silicon dioxide passivation. The microsensors present a low temperature coefficient of resistance and goad long-term stability, The sensitivity is 0.15 mV (V bar)(-1) with low sensitivity drift and low combined non-linearity and hysteresis in the pressure range 0-10 bar.
Keywords:
ceramics
high temperature
piezoresistive pressure sensors
tantalum nitride
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Key information extracted from the uploaded paper, including a brief overview, abstract, background, key highlights, visual analysis, and future outlook.

Journal

Sensors and Actuators A-Physical cover
Sensors and Actuators A-Physical
IF:
4.9
Papers:
1.5W
Citations:
3.3W

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