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High-temperature CH4 sensors based on multilayer Ga2O3/SnO2/Ga2O3 thin-film structures with SiO2 barrier layers
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DOI：10.1016/j.mseb.2026.119622.png)
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Abstract
En 中文
• Annealing of Ga2O3/SnO2/Ga2O3 is an effective way to produce a mixed Ga2O3 + SnO2 phase. • The a-SiO2 barrier and top layers are sources of high a-SiO2-x content in the films. • The film has a response of 40.6 to 2000 ppm NH3 at 450 °C with response time of 10.9 s. • An a-SiO2 top layer on the thin films optimizes sensitivity to CH4. • The response of the films with a SiO2 top layer to 2000 ppm CH4 is 9.46 at 550 °C.
Keywords:
CH4 sensors
Ga2O3
SnO2
SiO2
Thin films
Metal oxides multilayers
High-temperature
Extreme conditions
Journal
M
IF:
4.6
Papers:
6.5K
Citations:
2.0W
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