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Highly Stable Electronics Based on β-Ga2O3 for Advanced Memory Applications
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DOI：10.1002/advs.202413846.png)
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Abstract
En 中文
Wide-bandgap (WBG) semiconductors are at the forefront of driving innovations in electronic technology, perpetuating Moore's Law and opening up new avenues for electronic devices. Although beta-Ga2O3 has attracted extensive research interest in advanced electronics, its high-temperature and high-speed volatile memory applications in harsh environment has been largely overlooked. Herein, a high-performance hexagonal boron nitride (h-BN)/beta-Ga2O3 heterostructure junction field-effect transistor (HJFET) is fabricated, exhibiting an off-state current as low as approximate to 10 fA, a high on/off current ratio of approximate to 108, a low contact resistance of 5.6 Omegamm, and an impressive field-effect electron mobility of 156 cm2 (Vs)-1. Notably, the current h-BN/beta-Ga2O3 HJFET exhibits outstanding thermal reliability in the ultra-wide temperature range from 223 to 573 K, as well as long-term environmental stability in air, which confirms its inherent capability of operation in harsh environments. Moreover, the h-BN/beta-Ga2O3 HJFET demonstrates successful applications for accelerator-in-memory computing fields, including dynamic random-access memory structure and neural network computations. These superior characteristics position beta-Ga2O3-based electronics as highly promising for applications in extreme environments, with particular relevance to the automotive, aerospace, and sensor sectors.
Keywords:
dynamic random-access memory
stability
wide-bandgap semiconductors
beta-Ga2O3/h-BN heterostructure
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