.png){kind=icon}
.png){kind=icon}
Return
Homogenizing two-dimensional crystals
.png){kind=icon}
PRE
AI
DOI：10.1126/science.aec0435.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
As semiconductor devices shrink to the nanometer regime, so too do the thickness of their components. Transition-metal dichalcogenides—a two-dimensional (2D) layer of transition-metal atoms sandwiched between 2D layers of chalcogen atoms (such as sulfur and selenium)—have emerged as the next-generation semiconductor material beyond silicon (1). Although their atomic-scale thickness is an intrinsic advantage, wafer-scale (size of an entire silicon wafer) integration of single-crystal transition-metal dichalcogenide (a lattice structure with an uninterrupted repeating pattern) has been a long-standing challenge. Synthesis often requires complex preconditioning of the substrate or highly constrained growth conditions, limiting reproducibility. On page 354 of this issue, Zou et al. (2) report that depositing an atomic layer of lanthanum on a sapphire substrate can template the growth of a single-crystalline transition-metal dichalcogenide. This versatile process of producing wafer-scale films with homogeneous orientation addresses the most critical requirements for industrial implementation.
Journal
IF:
45.8
Papers:
1.4W
Citations:
78.6W