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III-Nitride Micro-Array Integration for Photon Transceiver
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DOI：10.1002/lpor.202500815.png)
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Abstract
En 中文
III-nitride structures offer a promising platform for high-density and versatile photonic integration for crucial applications such as on-chip optical communication, computing, and memory. However, III-nitride photonic integration has suffered from complex fabrication processes, low optical output power, and low −3 dB bandwidth. Here, micro-array integrated structure with the wavelength of 275 nm is introduced into nitride photonic integrated circuits (PICs). Solar blind micro-array integrated chips incorporating light-emitting diodes (LEDs) and photodetectors (PDs) greatly enhance the −3 dB bandwidth to 451 MHz under a low current density of 30 A cm−2. Furthermore, the miniature multiple quantum wells (Mini-MQWs) structure is incorporated into the solar-blind nitride epilayers to effectively reduce carrier lifetime. The Al reflector design further enhances the optical confinement of integrated waveguides by 51.9%. The integrated PD demonstrates an excellent photo-to-dark current ratio of 6.51 × 105 and a self-driven response capability of 73.3 A W−1. Ultimately, the micro-array integrated chips demonstrate a record on-chip solar-blind communication rate of 200 Mbps and nanosecond-range transient response time. In addition, the Mini-MQWs structure micro-array integrated PD exhibits the bidirectional opening phenomenon of photo-to-dark current ratio with an increase of more than two orders of magnitude at a 6 V voltage bias, providing an interesting method for realizing efficient on-chip full-duplex optical communication technology.
Keywords:
AlGaN
deep ultraviolet
micro-array integration
on-chip optical communication
photon transceivers
Journal
L
IF:
10
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3.7K
Citations:
2.1W
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