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Imaging Dielectric Breakdown in Valence Change Memory
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DOI：10.1002/adfm.202102313.png)
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Abstract
En 中文
Dielectric breakdown (DB) controls the failure, and increasingly the function, of microelectronic devices. Standard imaging techniques, which generate contrast based on physical structure, struggle to visualize this electronic process. Here in situ scanning transmission electron microscopy (STEM) electron beam-induced current (EBIC) imaging of DB in Pt/HfO2/Ti valence change memory devices is reported. STEM EBIC imaging directly visualizes the electronic signatures of DB, namely local changes in the conductivity and in the electric field, with high spatial resolution and good contrast. DB is observed to proceed through two distinct structures arranged in series: a volatile, soft filament created by electron injection; and a non-volatile, hard filament created by oxygen-vacancy aggregation. This picture makes a physical distinction between soft and hard DB, while at the same time accommodating progressive DB, where the relative lengths of the hard and soft filaments can change on a continuum.
Keywords:
device physics
dielectric breakdown
hafnium oxide
resistive random access memory
scanning transmission electron microscope electron beam induced current
Journal
IF:
19
Papers:
3.4W
Citations:
32.1W
