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Impact of Graphene Oxide on the Physical Properties of the Inorganic 2D Semiconductor Material Based Indium(III) Sulfide
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DOI：10.1007/s10904-025-03640-8.png)
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Abstract
En 中文
Thin-film-based solar cell research is a critical focus for materials scientists due to its rapid growth as a sustainable energy solution. Indium sulfide (In2S3) has emerged as a promising material in the development of CdTe-based photovoltaic devices. In2S3; an inorganic two-dimensional semiconductor, has attracted significant interest for its potential in thin-film photovoltaics, photoelectrochemical cells, and other energy-related applications. Despite this growing interest, the commercial form of In2S3 remains under characterized. In this study, we systematically investigate the physical characteristics of graphene oxide (GO) incorporated into powdered beta-phase In2S3. The samples were analyzed using X-ray diffraction (XRD) analysis, X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and impedance spectroscopy (IS). XRD analysis confirmed that all samples were polycrystalline and crystallized in the tetragonal beta-phase, with a reduction in crystalline size as the GO content increased. XPS analysis indicated the formation of oxygen vacancies without significant changes in elemental composition. TEM images showed that GO was well dispersed across the surface of In2S3, resulting in a reduced particle size. Electrical characteristics, measured via impedance spectroscopy, showed semiconducting behavior with a decrease in resistance as temperature increased, indicating enhanced conductivity. The results suggest that GO-doped In2S3 pellets could serve as promising materials for photovoltaic systems, especially as optical windows in solar cells. The study offers valuable insights into the role of GO in modulating the properties of In2S3 and highlights its potential for optimizing materials used in solar applications.
Keywords:
In2S3
Graphene Oxide
Powders
XRD
XPS
TEM
Solar Cells
Journal
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