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Impact of post-deposition annealing on the optoelectronic synaptic performance of ZnO thin-film transistors
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DOI：10.1088/1361-6463/ae5f2b.png)
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Abstract
En 中文
Post-deposition annealing is a standard step in the fabrication of oxide semiconductor thin-film transistors, aimed at enhancing the material properties of the thin films and, consequently, improving their electrical performance. However, the effects of the annealing process on their synaptic behavior remain largely unexplored. In this study, we have investigated the effects of the post-deposition annealing process on the synaptic performance of zinc oxide (ZnO) thin-film transistors fabricated by sputtering. Synaptic actions such as excitatory post-synaptic current, short-term memory, long-term memory, and paired-pulse facilitation are emulated using the persistent photoconductivity of the ZnO thin film. The synaptic response of pristine and annealed devices (vacuum, oxygen, air) is studied. Oxygen and air annealing reduces oxygen vacancies, thereby significantly degrading the synaptic performance. At 100 s, the percentage retention in the current is nearly 41% (36%) for the pristine (vacuum) sample, but 0% for the oxygen- and air-annealed samples. Paired pulse facilitation values remain stable for pristine (∼110%) and vacuum-annealed (∼117%) samples, whereas a 55% and 86% reduction is demonstrated at Δt = 50 s for oxygen- and air-annealed samples, respectively, compared to pristine samples. The results reported here reveal that vacuum annealing preserves most of the oxygen vacancies present in the pristine film, thereby retaining the synaptic performance, while offering improved transistor characteristics. The results prove useful in optimizing the fabrication process conditions to achieve an enhanced synaptic performance.
Keywords:
ZnO thin-film transistors
post-deposition annealing
synaptic performance
oxygen vacancies
optoelectronic devices
Journal
J
IF:
3.2
Papers:
726
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0
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