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Implementing κ-Ga2O3 Polymorphs Using Ga Predeposition
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DOI：10.1021/acs.cgd.4c01259.png)
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Abstract
En 中文
Single kappa-phase gallium oxide (kappa-Ga2O3) has limited growth at low temperatures due to lattice constant mismatch with sapphire substrates. This study reports that gallium (Ga) predeposition effectively mitigates this mismatch, enabling the growth of kappa-Ga2O3 epilayers at low temperatures rather than the more common alpha-Ga2O3 epilayers. High-resolution X-ray diffraction demonstrated that the Ga2O3 phase can be grown as pure alpha and kappa-phases without the formation of mixed phases by controlling the gallium monochloride (GaCl) flow rate. Single kappa-phase and mixed phases Ga2O3 samples for the structural and optical properties were analyzed. Furthermore, a deep ultraviolet photodetector device with a metal-semiconductor-metal structure was fabricated using kappa-Ga2O3 thin films and lattice mismatch relaxation Ga predeposition layers grown at low temperatures. The device exhibited a sharp response with a maximum responsivity at 260 nm, indicating the potential of the grown kappa-Ga2O3 as a highly selective ultraviolet C-band detector.
Keywords:
HETEROEPITAXIAL GROWTH
TEMPERATURE
PHASES
ALPHA
BETA
Journal
C
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3.4
Papers:
1.6W
Citations:
3.5W