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Improving Write Performance Through Reliable Asynchronous Operation in Physically-Addressable SSD

delete2020-01-01
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OA
AI
D
Daeyong Lee
J
Jaewook Kwak
G
Gyeongyong Lee
M
Moonseok Jang
J
Joonyong Jeong
K
Kexin Wang
J
Jungwook Choi
Y
Yong Ho Song *
DOI:10.1109/ACCESS.2020.3033886delete
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Abstract

Abstract

En 中文
Physically-addressable solid-state drives (PASSDs) are secondary storage devices that provide a physical address-based interface for a host system to directly control NAND flash memory. PASSDs overcome the shortcomings such as latency variability, resource under-utilization, and log-on-log that are associated with legacy SSDs. However, in some operating environments, the write response time significantly increases because the PASSD reports the completion of a host write command synchronously (i.e., write-through) owing to reliability problems. It contrasts asynchronous processing (i.e., write-back), which reports a completion immediately after data are received in a high-performance volatile memory subsequently used as a write buffer to conceal the operation time of NAND flash memory. Herein, we propose a new scheme that guarantees write reliability to enable a reliable asynchronous write operation in PASSD. It is designed to use a large-granularity mapping table for minimizing the memory requirements and performing internal operations at an idle time to avoid response delays. Results demonstrate that the proposed PASSD reduces the average write response time by up to 88% and guarantees reliability without performance degradation.
Keywords:
Reliability
Memory management
Time factors
Degradation
Writing
Flash memories
Delays
Flash translation layer
NAND flash memory
open-channel SSD
physically-addressable SSD
solid-state drive
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Key information extracted from the uploaded paper, including a brief overview, abstract, background, key highlights, visual analysis, and future outlook.

Journal

IEEE Access cover
IEEE Access
IF:
3.6
Papers:
9.8W
Citations:
29.4W

Organization

H
hanyang university
Scholars:
2.9W
Papers: 2.7W
Citations: 36
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