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In-memory computing with emerging nonvolatile memory devices

delete2021-11-04
delete57
PRE
AI
C
Caidie Cheng
P
Pek Jun Tiw
Y
Yimao Cai
闫小琴 (Xiaoqin Yan)
杨玉超 cover
杨玉超 (Yuchao Yang)
R
Ru Huang *
DOI:10.1007/s11432-021-3327-7delete
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Abstract

Abstract

En 中文
The von Neumann bottleneck and memory wall have posed fundamental limitations in latency and energy consumption of modern computers based on von Neumann architecture. In-memory computing represents a radical shift in the computer architecture that can address such problems by merging computing functions within the memory itself. In this article, we review the emerging nonvolatile memory devices, such as resistance-based and charge-based memory devices, that are explored for in-memory computing applications. We will provide an overview of the materials, mechanisms, and integration of these devices, and discuss the optimizations at the device and array levels that are required to better support in-memory computing. Recent progress in the application of in-memory computing in artificial neural networks, spiking neural networks, digital logic in memory as well as hardware security will also be discussed. Finally, we will discuss the remaining challenges in this field and potential pathways to address them.
Keywords:
in-memory computing
von Neumann bottleneck
nonvolatile memory
energy efficiency
neural network
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Journal

Science China Information Sciences cover
Science China Information Sciences
IF:
7.6
Papers:
4.9K
Citations:
8.9K

Organization

P
peking university
Scholars:
11.8W
Papers: 8.7W
Citations: 146