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Indium-Tin-Oxide for High-performance Electro-optic Modulation
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DOI：10.1515/nanoph-2015-0006.png)
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Abstract
En 中文
Advances in opto-electronics are often led by discovery and development of materials featuring unique properties. Recently, the material class of transparent conductive oxides (TCO) has attracted attention for active photonic devices on-chip. In particular, indium tin oxide (ITO) is found to have refractive index changes on the order of unity. This property makes it possible to achieve electrooptic modulation of sub-wavelength device scales, when thin ITO films are interfaced with optical light confinement techniques such as found in plasmonics; optical modes are compressed to nanometer scale to create strong light-matter interactions. Here we review efforts towards utilizing this novel material for high performance and ultra-compact modulation. While high performance metrics are achieved experimentally, there are open questions pertaining to the permittivity modulation mechanism of ITO. Finally, we review a variety of optical and electrical properties of ITO for different processing conditions, and show that ITO-based plasmonic electro-optic modulators have the potential to significantly outperform diffraction-limited devices.
Keywords:
DOPED IN2O3 FILMS
SLOT WAVE-GUIDES
THIN-FILMS
ELECTRICAL-PROPERTIES
SUBWAVELENGTH CONFINEMENT
ROOM-TEMPERATURE
HIGH-SPEED
ITO FILMS
SILICON
PLASMONICS
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