.png){kind=icon}
.png){kind=icon}
Return
InGaN Multicomponent Nanoheterostructure Optimization for Red Emission
.png){kind=icon}
PRE
AI
DOI：10.1134/S1063774525600103.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
InGaN multicomponent nanoheterostructure (MCNH) optimization for reaching red emission was carried out based on simulation in SimWindows software. Based on theoretical results it was detected that doping InGaN MCNH active region by Europium (3%) into barriers between multiply quantum wells in the active region InGaN red emission can be seen. InGaN (Eu) multicomponent nanoheterostructure were grown by MOCVD based on simulation results. Comparison of the theoretical data and the experimental data was performed.
Keywords:
InGaN
multicomponent nanoheterostructure
red emission
Europium doping
MOCVD
Journal
C
IF:
0.5
Papers:
107
Citations:
2.2K