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Integrated dispersion compensated mode-locked quantum dot laser

delete2020-08-07
delete15
PRE
AI
Z
Zeyu Zhang *
J
Justin Norman
S
Songtao Liu
A
Aditya Malik
J
John E. Bowers
DOI：10.1364/PRJ.397175delete
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Abstract

Abstract

En 中文
Quantum dot lasers are excellent on-chip light sources, offering high defect tolerance, low threshold, low temperature variation, and high feedback insensitivity. Yet a monolithic integration technique combining epitaxial quantum dot lasers with passive waveguides has not been demonstrated and is needed for complex photonic integrated circuits. We present here, for the first time to our knowledge, a monolithc offset quantum dot integration platform that permits formation of a laser cavity utilizing both the robust quantum dot active region and the versatility of passive GaAs waveguide structures. This platform is substrate agnostic and therefore compatible with the quantum dot lasers directly grown on Si. As an illustration of the potential of this platform, we designed and fabricated a 20 GHz mode-locked laser with a dispersion-engineered on-chip waveguide mirror. Due to the dispersion compensation effect of the waveguide mirror, the pulse width of the mode-locked laser is reduced by a factor of 2.8. (C) 2020 Chinese Laser Press
Keywords:
PULSES
SI

Journal

Photonics Research cover
Photonics Research
IF:
7.2
Papers:
2.4K
Citations:
1.3W

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