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Interface study of Sc/Si multilayers
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DOI：10.1016/j.apsusc.2020.146066.png)
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Abstract
En 中文
The properties of the interfaces of the Sc/Si multilayers are evaluated utilizing grazing incident X-ray reflection, X-ray diffraction and X-ray scattering. The process of amorphous-to-crystalline transition was studied. A series of Sc/Si multilayers with and without B4C diffusion barrier layer at different interfaces were fabricated. The interface properties of Sc-on-Si and Si-on-Sc, including roughness and diffusion, were characterized separately. The asymmetry property of two interfaces was confirmed. The scattering measurements results show that, Sc/B4C/Si and B4C/Sc/B4C/Si multilayers are similar and narrower comparing with the results of Si/B4C/Sc and Sc/Si multilayers. The X-ray diffraction results show that, the Si/B4C/Sc multilayers were stability until 300 degrees C, while after annealing at 300 degrees C Sc (1 1 1) signal is reduced sharply in the Sc/Si multilayers, for Sc/B4C/Si multilayers the reduction of Sc (1 1 1) signal experienced an obvious reduction but not severe compared with Sc/Si multilayers. These results indicate that Sc-on-Si interface contributes the majority of roughness while the interface diffusion turns out to be more severe at Si-on-Sc interface.
Keywords:
Multilayers
Interface
Diffusion barrier layer
Annealing
Sc/Si
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