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Interfacial Engineering of PdSe2/GaSe Heterostructures for Applications as a Light-Activated Ultrafast NO2 Sensor at Room Temperature
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DOI：10.1021/acsanm.6c01888.png)
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Abstract
En 中文
Achieving rapid recovery kinetics in room-temperature (RT) gas sensors remains a bottleneck for practical environmental monitoring. Herein, we demonstrate a high-performance NO2 sensor based on the n-PdSe2/p-GaSe vertical heterojunction, precisely assembled via a dry-transfer technique. Under 405 nm illumination, the nanodevice exhibits exceptional sensing properties at RT, featuring ultrafast response and recovery times of 25 and 82 s, respectively─a remarkable enhancement compared to its dark-state performance. Beyond its fast-response characteristics, the sensor maintains high selectivity toward NO2 against common interfering gases and reliable long-term stability. Mechanistically, in situ Kelvin probe force microscopy (KPFM) revealed a 23 mV surface potential change upon NO2 exposure, providing direct spatial evidence of work-function modulation and a downward Fermi-level shift, consistent with NO2-induced p-type doping. This phenomenon underscores a synergistic interplay between the p–n junction’s built-in field and photoexcited carrier dynamics, which effectively suppresses the activation energy barrier for gas–solid interactions at the nanomaterial interface, thereby markedly expediting NO2 adsorption/desorption kinetics. This work highlights the efficacy of interfacial barrier engineering in 2D nanostructures, offering a promising strategy for the realization of ultrafast, room-temperature, and energy-efficient optoelectronic gas-sensing technologies.
Keywords:
Gases
Heterojunctions
Heterostructures
Sensors
Thermodynamic properties
PdSe2/GaSe heterojunction
in situ KPFM
room temperature
interfacial engineering
2D nanostructures
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5.5
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2.5K
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5.0W
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