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Interfacial engineering with chemical bath deposition for high-performance HgTe quantum dot-based short-wave infrared photodetectors
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DOI：10.1186/s40580-025-00519-9.png)
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Abstract
En 中文
Colloidal quantum dot-based short-wave infrared (SWIR) photodetectors are often limited by surface traps and high noise levels at room temperature. In this work, we present a low-temperature chemical bath deposition (CBD) strategy to grow a heterojunction passivation layer on HgTe quantum dot (QD) photoactive layers, enabling high-performance SWIR photodetection at room temperature. The CBD process achieves interfacial modification through a dual mechanism: sulfur ions penetrate the HgTe QD surface to form an Hg-S bonded interfacial region while simultaneously reacting with Cd2+ in the bath to create a CdS electron-accepting layer, resulting in a compositionally graded CdS/Hg-S/HgTe structure. The resulting interfacial improvement, coupled with energy level modification, facilitates carrier separation and passivates surface defects, thus simultaneously enhancing the responsivity and reducing noise current of photodetectors. As a result, the phototransistor based on the CdS/HgTe photoactive layer demonstrates a high room-temperature specific detectivity of 4.43 × 1011 Jones at 1550 nm and maintains detectivity around 1010 Jones at extended wavelengths up to 2500 nm. These results underscore the importance of interfacial engineering in colloidal QDs-based photodetectors and demonstrate CBD as a scalable, silicon-compatible passivation approach for achieving cryogen-free SWIR optoelectronic devices.
Keywords:
HgTe quantum dots
Short-wave infrared phototransistor
Chemical bath deposition
Interfacial engineering
CdS layer
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11
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543
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3.8K