.png){kind=icon}
.png){kind=icon}
Return
Interlayer Coupling Limit in Artificially Stacked MoS2 Homojunctions
.png){kind=icon}
OA
AI
DOI：10.1002/adfm.202310365.png)
.png){kind=icon}
.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
Interlayer interactions are one of the crucial parameters of two-dimensional (2D) layered materials-based junctions. Understanding the limits of interlayer coupling and defining the maximum building block thickness in artificially stacked 2D layered materials are key tasks that hold significant importance, not only in fundamental physics, but also in practical applications such as electronics, photonics, and optoelectronics. Here, the interlayer coupling limits are optically investigated of a model 2D layered semiconductor, MoS2, revealing the evolution of distinct interaction mechanisms between layers via artificial stacking. As the total thickness increases, a reduction in the stacking angle influence on the properties of the homojunctions is reflected in the photoluminescence and second harmonic generation responses. The results show that the effective coupling limit for vertically stacked 2D metamaterials resides in three-layer flakes. The findings pave the way to advanced and complex devices of 2D superlattices for photonics and optoelectronics.
Keywords:
2D materials
interlayer coupling
molybdenum disulfide
transition metal dichalcogenides
van der Waals vertical structures
AI Summary
Key information extracted from the uploaded paper, including a brief overview, abstract, background, key highlights, visual analysis, and future outlook.