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Ion beam technology: From defect engineering to atomic-level doping
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DOI：10.1360/SSPMA-2025-0336.png)
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Abstract
En 中文
The emergence of two-dimensional materials and other new materials has injected new impetus into the traditional semiconductor industry. Traditional chemical synthesis and mechanical processing methods often struggle to achieve precise control of material properties, especially at the nanoscale, where uncontrollable defects are easily introduced and material intrinsic characteristics are easily destroyed. Ion beam technology, with its unique atomic level manipulation capability and high-precision processing characteristics, is expected to become a key means in the development of new materials and devices. This article aims to systematically review the latest progress of ion beam technology in defect engineering, atomic-level doping, and device modification, summarize the current application status of ion beams with different energies from the perspective of ion beam energy, and focus on the application of low-energy ion implantation in two-dimensional materials. Finally, the challenges faced by low-energy ion beams in the field of two-dimensional materials were summarized, and the enormous potential of cluster ion beams in the application of two-dimensional materials was discussed.
Keywords:
ion beam technology
two-dimensional materials
photoelectric devices
Journal
S
IF:
0.5
Papers:
58
Citations:
0