.png){kind=icon}
.png){kind=icon}
Return
Junctionless multigate field-effect transistor
.png){kind=icon}
OA
AI
DOI：10.1063/1.3079411.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
This paper describes a metal-oxide-semiconductor (MOS) transistor concept in which there are no junctions. The channel doping is equal in concentration and type to the source and drain extension doping. The proposed device is a thin and narrow multigate field-effect transistor, which can be fully depleted and turned off by the gate. Since this device has no junctions, it has simpler fabrication process, less variability, and better electrical properties than classical MOS devices with source and drain PN junctions.
Keywords:
field effect transistors
MOSFET
p-n junctions
semiconductor doping
Journal
IF:
3.6
Papers:
10.4W
Citations:
17.8W