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Learning Abilities Achieved by a Single Solid-State Atomic Switch

delete2010-04-21
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OA
AI
T
Tsuyoshi Hasegawa *
T
Takeo Ohno
K
Kazuya Terabe
T
Tohru Tsuruoka
T
Tomonobu Nakayama
J
James K. Gimzewski
M
Masakazu Aono
DOI:10.1002/adma.200903680delete
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Abstract

Abstract

En 中文
Learning abilities are demonstrated using a single solid-state atomic switch, wherein the formation and dissolution of a metal filament are controlled depending on the history of prior switching events. The strength of the memorization level gradually increases when the number of input signals is increased. Once the filament forms a bridge, electrons flow in a ballistic mode and long-term memorization is achieved (see figure).
Keywords:
ELECTROCHEMICAL REACTION
MEMORIES
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Key information extracted from the uploaded paper, including a brief overview, abstract, background, key highlights, visual analysis, and future outlook.

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Advanced Materials cover
Advanced Materials
IF:
26.8
Papers:
3.4W
Citations:
46.0W

Organization

N
national institute for materials science
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Papers: 1.3W
Citations: 28
University of California System cover
University of California System
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