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Light polarization as a control knob for resistive switching in chiral perovskite memory
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DOI：10.1016/j.nanoen.2026.112278.png)
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Abstract
En 中文
• Light polarization is introduced as a control knob for RRAM for the first time. • RCP and LCP illumination systematically modulate Vset under identical intensity. • Bulky NEA ligands expand interlayer spacing and promote uniform Ag migration. • Synergetic effect of light polarization and expanded interlayers uniform switching. • CPL-dependent synaptic plasticity improves ANN-based pattern recognition.
Keywords:
Chiral perovskite
Resistive random-access memory (RRAM)
Chiroptical property
CPL modulation
Structural engineering
Journal
IF:
17.1
Papers:
1.1W
Citations:
13.0W
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Cited Papers