Low-crosstalk silicon photonics arrayed waveguide grating

Zhiqun Zhang Zhiqun Zhang

doi:10.3788/COL201715.041301

Low-crosstalk silicon photonics arrayed waveguide grating

2017-01-01

21

PRE

AI

Z

Zhiqun Zhang Zhiqun Zhang

Fangjiang Li Fangjiang Li

and Qing Fang and Qing Fang *

DOI：10.3788/COL201715.041301

Original

Original request for help

Save

Abstract

En 中文

In this Letter, we demonstrate a 1 x 4 low-crosstalk silicon photonics cascaded arrayed waveguide grating, which is fabricated on a silicon-on-insulator wafer with a 220-nm-thick top silicon layer and a 2 mu m buried oxide layer. The measured on-chip transmission loss of this cascaded arrayed waveguide grating is similar to 4.0 dB, and the fiber-to-waveguide coupling loss is 1.8 dB/facet. The measured channel spacing is 6.4 nm. The adjacent crosstalk by characterization is very low, only -33.2 dB. Compared to the normal single silicon photonics arrayed waveguide grating with a crosstalk of similar to-12.5 dB, the crosstalk of more than 20 dB is dramatically improved in this cascaded device.

Keywords:

ON-INSULATOR

Low-crosstalk silicon photonics arrayed waveguide grating

Abstract

Journal

Organization

Cited Papers