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Low-temperature solid-phase-crystallization in Si1-xGex/SiO2

delete2000-06-01
delete2
PRE
AI
S
S.K Park *
S
Satoshi Yamaguchi
N
Nobuyuki Sugii
K
Kiyokazu Nakagawa
DOI：10.1016/S0169-4332(00)00096-9delete
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Abstract

Abstract

En 中文
Solid-phase crystallization (SPC) properties of Si1-xGex (x = 0-0.3) layers on SiO2 have been investigated by using ellipsometric spectroscopy. Crystallinity of the Si(1-x)Gx(e) layers is significantly affected by both annealing-time and Ge-concentration x. The crystallinity abruptly increases at the end of the incubation time and gradually saturated during the crystallization time. As x increases, we have found that the nucleation is significantly enhanced and the estimated incubation time of x = 0.3 is about 1/100 of that of pure Si (x = 0). The crystallization time defined as the time to complete SPC after nucleation also significantly decreases with increasing x. Such changes of the crystallinity in the Ce-doped Si1-xGex layers perhaps originates from the difference between bond energies of Si-Si, Si-Ge, and Ge-Ge. The decrease of bond energy activates both nucleation and crystal-growth process in Si1-xGex layers. (C) 2000 Elsevier Science B.V. All rights reserved.
Keywords:
solid-phase crystallization
nucleation
crystallinity
optical spectroscopy
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Journal

Applied Surface Science cover
Applied Surface Science
IF:
6.9
Papers:
6.1W
Citations:
19.4W

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No organization information available