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Low-thermal-effect Nd:YVO4 picosecond laser amplifier achieving 302.2 W output with near-diffraction-limited beam quality
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DOI：10.1117/1.OE.65.4.046101.png)
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Abstract
En 中文
This study presents an efficient, high-power, high-beam-quality Nd:YVO4 laser amplifier end-pumped with 888 nm laser diodes. A 24 W, 5 MHz, 8.2 ps, 1064 nm seed laser was amplified to 302.2 W in a three-stage Nd:YVO4 amplifier, achieving a total extraction efficiency of 44.0%. By mitigating the impact of thermal effects in the first amplification stage and implementing low-thermal-effect design strategies in the second and third amplification stages, the beam quality of the amplifier was effectively maintained. Without additional compensation components, the beam quality factor remained below 1.3 and was further improved to below 1.2 with the introduction of a spherical aberration phase plate. Frequency conversion in an LBO crystal generated 210.7 W of 532 nm laser with a beam quality factor of 1.02. These results demonstrate that a properly designed thermal management strategy can provide a practical alternative to complex active compensation in high-average-power, high-brightness picosecond laser systems.
Keywords:
laser amplifier
Nd:YVO4
beam quality
low-thermal-effect
Journal
O
IF:
1.2
Papers:
178
Citations:
1.1W
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Cited Papers