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Magnetic tunnel junctions for harsh environment resilience and space exploration: a review
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DOI：10.1088/1361-6463/ae5e80.png)
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Abstract
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The potential and challenges surrounding magnetic tunnel junctions (MTJs) in harsh environments, with emphasis on space exploration are reviewed. MTJs possess unique attributes, including non-volatility and higher radiation damage hardness than semiconductor devices, making them well-suited for space applications offering enhanced reliability and longevity for space-bound electronic systems. Their integration with complementary metal-oxide-semiconductor (CMOS) technologies showcase their potential to revolutionize space electronics by providing robust, energy-efficient solutions capable of withstanding the challenges posed by space environments. While MTJs exhibit robustness in high-radiation environments, their performance is notably affected by temperature variations. Large temperature variations can degrade critical magnetic properties crucial to device functionality such as saturation magnetization, anisotropy field, and exchange field negatively impacting thermal stability, tunneling magnetoresistance, critical switching current density, and switching delay. Specifically, high temperatures notably reduce the magnetic anisotropy and saturation magnetization, thereby lowering the energy barrier and leading to reduced data retention. In contrast, MTJs generally display improved performance at lower temperatures, albeit with increased switching delays. Although MTJs are intrinsically radiation-hard spintronic logic devices, they remain vulnerable to the harsh conditions of space-characterized by intense solar radiation, cosmic rays, and extreme temperature fluctuations-which pose significant challenges to the reliability and stability of both spintronic elements and supporting circuitry. Advances in materials are crucial to enhance the thermal stability of MTJs and to develop spintronics-based alternatives capable of replacing CMOS devices in space applications.
Keywords:
magnetic tunnel junctions (MTJ)
spintronics
radiation hardness
extreme temperature environments
MRAM
FPGA
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3.2
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2.6W
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