MAPbI3 on GaAs: A Washable Heterointerface with Robust Passivation Effect

doi:10.1021/acs.jpcc.3c05799

MAPbI3 on GaAs: A Washable Heterointerface with Robust Passivation Effect

2024-01-04

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Emmanouil G. Manidakis *

Constantinos C. Stoumpos

N

N. T. Pelekanos

DOI：10.1021/acs.jpcc.3c05799

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We demonstrate that the deposition of methylammonium lead iodide (MAPbI(3)) on native nominally undoped (100) GaAs substrates generates an enhancement in the GaAs photoluminescence (PL) intensity by more than 3 orders of magnitude. We attribute this pronounced PL enhancement to some very efficient MAPbI3-induced passivation schemes of the GaAs surface. Time-resolved PL experiments reveal greatly enhanced carrier lifetimes next to the GaAs surface, in agreement with a passivation process. X-ray photoelectron spectroscopy measurements on ultrathin MAPbI(3)/GaAs and PbI2/GaAs samples suggest some Pb-related deoxygenation of the GaAs surface, as an atomistic mechanism possibly related to the passivation effect. Notably, the whole process is fully reversible, as it suffices to immerse the MAPbI(3)/GaAs sample in salt water and the MAPbI(3) layer is completely removed, while the PL intensity and spectral features of the GaAs substrate return to their pristine condition.

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PHOTOLUMINESCENCE

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MAPbI3 on GaAs: A Washable Heterointerface with Robust Passivation Effect

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