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Material challenges for nonvolatile memory
DOI:10.1063/5.0111671.png)
Abstract
En
Journal
IF:
4.5
Papers:
2.8K
Citations:
1.2W
Organization
Cited Papers
Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices
APL MATERIALS
IF4.5
A nanoscale analysis method to reveal oxygen exchange between environment, oxide, and electrodes in ReRAM devices
APL MATERIALS
IF4.5
Tailoring the synaptic properties of a-IGZO memristors for artificial deep neural networks
APL MATERIALS
IF4.5
Polymerized hybrid Hf-based hydroquinone/Al2O3 bilayer structure by molecular/atomic layer deposition for non-volatile resistive random access memory
APL MATERIALS
IF4.5
Conduction channel configuration controlled digital and analog response in TiO2-based inorganic memristive artificial synapses
APL MATERIALS
IF4.5
Thickness dependence of spin-orbit torques in Pt/Co structures on epitaxial substrates
APL MATERIALS
IF4.5


