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Matrix Element Effect in Layered PdSe2
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DOI：10.1021/acs.jpcc.5c00015.png)
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Abstract
En 中文
Palladium diselenide (PdSe2), a novel two-dimensional dichalcogenide, has garnered widespread attention due to its exceptional optoelectronic properties. Unveiling the matrix element effect in layered semiconducting materials is essential for optimizing the performance of optoelectronic devices. However, no dedicated study has yet been reported on the photon energy and temperature dependence of this effect in PdSe2. In this work, we conducted a direct investigation of the electronic band structure of PdSe2 as a function of temperature, employing photon-energy-dependent angle-resolved photoemission spectroscopy (ARPES). The wave vector asymmetry and signal drop at the valence band maximum stem from the matrix elements involved in the photoemission process. This effect is influenced by both the sample's temperature and the photon energy. Our findings provide clear, direct evidence of the matrix element effect in PdSe2, which is dependent on both the temperature and photon energy.
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3.2
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5.6W
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15.0W