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Mechanistic Insights into Self-Limiting Si–F CEI Formation via a Molecularly Designed Sacrificial Additive

delete2026-04-09
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PRE
AI
M
Mamta Sham Lal *
R
Robin Kumar
D
Devendra Yadav
K
Khorsed Alam
Y
Yogendra Kumar
A
Akanksha Joshi
A
Arun Krishnan
T
Tal Shalom
Y
Yuri V. Mikhlin
H
Hagit Aviv
D
Dmitry Bravo‐Zhivotovskii *
Y
Yitzhak Apeloig *
D
Dan Thomas Major
M
Malachi Noked *
DOI:10.1016/j.ensm.2026.105105delete
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Abstract

Abstract

En 中文
High-nickel layered cathodes, such as NCM811, promise high energy density for next-generation lithium-ion batteries but suffer from interfacial degradation, irreversible capacity loss, and transition metal dissolution under high-voltage operation. Here, a sacrificial silyl ketone additive, bis(di-tert-butylmethylsilyl) ketone, (MetBu2Si)2CO, is introduced to simultaneously modulate cathode–electrolyte interphase (CEI) formation and suppress parasitic reactions. (MetBu2Si)2CO undergoes preferential oxidation during the first cycle, forming a self-limiting, thin, and uniform protective layer while scavenging HF, as evidenced by Si 2p XPS and 19F NMR studies. Furthermore, in situ XRD reveals that (MetBu2Si)2CO mitigates lattice distortions during the first cycle. Because of these multifunctional roles, our new additive is shown to significantly improve capacity retention and perform better than previously reported organosilicon additives. These results establish (MetBu2Si)2CO as a sacrificial, self-limiting additive that leads to the formation of an interphase ensuring long-term cathode stabilization, thus offering a molecular-level strategy to enable durable high-voltage lithium-ion battery operation.
Keywords:
High-nickel layered cathodes
Cathode–electrolyte interphase
Sacrificial additive
HF scavenging
Lattice distortion mitigation

Journal

Energy Storage Materials cover
Energy Storage Materials
IF:
20.2
Papers:
5.6K
Citations:
6.3W

Organization

B
bar-ilan
Scholars:
3
Papers: 1
Citations: 0
B
Bar-Ilan University
Scholars:
522
Papers: 255
Citations: 1.1W
T
Technion Israel Institute of Technology
Scholars:
1.6W
Papers: 1.5W
Citations: 2.0W
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