.png){kind=icon}
Return
Memory applications from 2D materials
.png){kind=icon}
PRE
AI
DOI：10.1063/5.0038013.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
As existing silicon-based memory technologies are reaching their fundamental limit, emerging memory alternatives, such as resistive random-access memories (RRAMs), magnetic random-access memories, and ferroelectric random-access memories, are intensively investigated with the aim of improving capacity, write/read speed, efficiency, and implementing unconventional computing for data-centric applications. Recent studies have exploited the nature of 2-dimensional layered materials (2DLMs) to integrate highly disparate materials with unique physical and chemical properties without the constraint of lattice matching and have demonstrated novel memory devices (such as resistive and magnetic) with unprecedented characteristics or unique functionalities desired in emerging memory technologies. This article primarily provides an overview of the progress made, advantages, and challenges toward practical application of 2DLM-based memory units. In this regard, novel electronic properties of these 2DLMs allow designing not only the memory unit but also selectors and CMOS components essential for RRAM technology. Here, we also experimentally demonstrate a proof-of-concept heterostructure consisting of 2DLMs that fulfill the function of a memory unit (using MoTe2) and selector (using WSe2) with desired characteristics for RRAM integration. This demonstration underscores the potential of 2DLMs and their heterostructure toward the realization of future memory technologies.
Keywords:
TRANSITION-METAL DICHALCOGENIDES
PIEZORESPONSE FORCE MICROSCOPY
SELECTOR DEVICE REQUIREMENTS
SCANNING PROBE MICROSCOPY
FIELD-EFFECT TRANSISTOR
MOLYBDENUM-DISULFIDE
MOS2
MONOLAYER
CONTACTS
ARRAYS
AI Summary
Key information extracted from the uploaded paper, including a brief overview, abstract, background, key highlights, visual analysis, and future outlook.
Journal
IF:
11.6
Papers:
1.2K
Citations:
1.3W
Organization
Cited Papers
ShareSaveRapid Flame Synthesis of Atomically Thin MoO3 down to Monolayer Thickness for Effective Hole Doping of WSe2.png)
NANO LETTERS
NANO LETTERSIF9.1
PREAI
ShareSaveShareSaveEfficient Spin-Orbit Torque Switching of the Semiconducting Van Der Waals Ferromagnet Cr2Ge2Te6ADVANCED MATERIALS
ADVANCED MATERIALSIF26.8
PREAI
ShareSaveDirect Photoluminescence Probing of Ferromagnetism in Monolayer Two-Dimensional CrBr3NANO LETTERS
OAAI
NANO LETTERSIF9.1
OAAIShareSaveLow-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 TransistorsNANO LETTERSOAAI
NANO LETTERSIF9.1
OAAIShareSaveDynamic Memory Cells Using MoS2 Field-Effect Transistors Demonstrating Femtoampere Leakage CurrentsACS NANO
ACS NANOIF16
PREAI
ShareSave
View more