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Memory cell based on a φ Josephson junction

delete2013-06-20
delete74
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OA
AI
G
Goldobin, E. *
S
Sickinger, H.
W
Weides, M.
R
Ruppelt, N.
K
Kohlstedt, H.
K
Kleiner, R.
K
Koelle, D.
DOI:10.1063/1.4811752delete
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Abstract

Abstract

En 中文
The phi Josephson junction has a doubly degenerate ground state with the Josephson phases +/-phi. We demonstrate the use of such a phi Josephson junction as a memory cell (classical bit), where writing is done by applying a magnetic field and reading by applying a bias current. In the store state, the junction does not require any bias or magnetic field, but just needs to stay cooled for permanent storage of the logical bit. Straightforward integration with rapid single flux quantum logic is possible. (C) 2013 AIP Publishing LLC.

Journal

Applied Physics Letters cover
Applied Physics Letters
IF:
3.6
Papers:
10.4W
Citations:
17.8W

Organization

E
eberhard karls university of tubingen
Scholars:
3.3W
Papers: 2.5W
Citations: 38
H
Helmholtz Association
Scholars:
13.2W
Papers: 10.7W
Citations: 145
Cited Papers

Cited Papers

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Method for reliable realization of a Φ Josephson junction
err2010-03-12
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errPugach, N. G.; Goldobin, E.; Kleiner, R.; Koelle, D.
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err2004-10-22
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errJonathan P. Wallis; Sunny Dzik
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Critical current diffraction pattern of SIFS Josephson junctions with a step-like F-layer
err2010-08-06
err9
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errWeides, M.; Peralagu, U.; Kohlstedt, H.; Pfeiffer, J.; Kemmler, M.; Guerlich, C.; Goldobin, E.; Koelle, D.; Kleiner, R.
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