Mesoporous Metastable CuTe2 Semiconductor

doi:10.1021/jacs.3c05846

Mesoporous Metastable CuTe2 Semiconductor

2023-10-18

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Md. Shahriar A. Hossain

YamauchiYusuke (Yusuke Yamauchi) *

DOI：10.1021/jacs.3c05846

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Binary metastable semiconductor materials offer exciting possibilities in the field of optoelectronics, such as photovoltaics, tunable photosensors, and detectors. However, understanding their properties and translating them into practical applications can sometimes be challenging, owing to their thermodynamic instability. Herein, we report a temperature-controlled crystallization technique involving electrochemical deposition to produce metastable CuTe(2 )thin films that can reliably function under ambient conditions. A series of in situ heating/cooling cycle tests from room temperature to 200 C-degrees followed by spectral, morphological, and compound analyses (such as ultraviolet-visible light spectroscopy, X-ray diffraction (XRD) analysis, and X-ray photoelectron spectroscopy (XPS)) suggest that the seeding electrodes play a key role in the realization of the metastable phase in CuTe2 films. In particular, CuTe2 films deposited on Al electrodes exhibit superior crystallinity and long-term stability compared with those grown on a Au substrate. The XRD data of thermally annealed CuTe2 thin films deposited on Al show a markedly sharp peak, indicating significantly increased crystal-domain sizes. Our method can be used to achieve the metastable phase of CuTe2 with a bandgap of 1.67 eV and offers outstanding photoresponsivity under different illumination conditions.

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Mesoporous Metastable CuTe2 Semiconductor

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