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Microstructure and composition of passivating interfaces in silicon heterojunction solar modules weathered in different climates
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DOI：10.1016/j.solmat.2026.114584.png)
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Abstract
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• Advanced electron microscopy resolves nanoscale structure/chemistry in 10-year weathered HIT modules. • ∼1.5 nm Oxygen-rich SiOx layers quantified at In2O3/a-Si:H interface in control & weathered cells. • No statistical change in SiOx interlayer thicknesses or a-Si:H morphology. • Subtle interfacial changes may relate to module electrical loss with aging.
Keywords:
Silicon heterojunction technology
Solar cell
HIT
Degradation
Microstructure
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