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Microwave-cut silicon layer transfer

delete2005-11-22
delete14
PRE
AI
D
D. C. Thompson
T
T. L. Alford
J
J. W. Mayer
T
T. Höchbauer
M
M. Nastasi
S
S. S. Lau
N
N. David Theodore
K
Kimmo Henttinen
S
Suni, I
P
Paul K. Chu
DOI：10.1063/1.2135395delete
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Abstract

Abstract

En 中文
Microwave heating is used to initiate exfoliation of silicon layers in conjunction with the ion-cut process for transfer of silicon layers onto insulator or heterogeneous layered substrates. Samples were processed inside a 2.45 GHz, 1300 W cavity applicator microwave system for time durations as low as 12 s. This is a significant decrease in exfoliation incubation times. Sample temperatures measured by pyrometry were within previous published ranges. Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy were used to determine layer thickness and crystallinity. Surface quality was measured by using atomic force microscopy. Hall measurements were used to characterize electrical properties as a function of postcut anneal time and temperature. (c) 2005 American Institute of Physics.
Keywords:
SI
IMPLANTATION
TEMPERATURE
TECHNOLOGY
GLASS
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Key information extracted from the uploaded paper, including a brief overview, abstract, background, key highlights, visual analysis, and future outlook.

Journal

Applied Physics Letters cover
Applied Physics Letters
IF:
3.6
Papers:
10.4W
Citations:
17.8W

Organization

No organization information available