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Mid-IR light modulators enabled by dynamically tunable ultra-high-Q silicon membrane metasurfaces
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DOI：10.1038/s41467-026-75121-6.png)
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Abstract
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Metasurfaces enable subwavelength control of free-space light for applications in sensing, nonlinear optics, and quantum photonics. However, their practical deployment is hindered by two key limitations: a tradeoff between low-Q resonances and weak amplitude contrast, and their predominantly static nature allowing only passive functionalities. These challenges are particularly severe in the mid-infrared (mid-IR), where the scarcity of low-loss materials constrains performance and scalability. Here, we demonstrate actively tunable single-crystalline silicon membrane metasurfaces combining high-Q resonances, strong amplitude contrast, and wafer-scale manufacturability. Our platform achieves record-high measured Q-factors up to 3000 in the mid-IR and supports two dynamic modulation schemes: electro-thermal tuning via Joule heating with >50% modulation depth at CMOS-compatible voltages and speeds up to 14.5 kHz, and ultrafast all-optical modulation via carrier generation in silicon with nanosecond response times and estimated sub-GHz rates. These results establish silicon membrane metasurfaces as a scalable platform for active mid-IR photonics. Mid-infrared metasurfaces have the potential to enable advanced sensing and communication technologies, but scalable active devices remain challenging. Here, the authors demonstrate wafer-scale silicon membrane metasurfaces with record-high quality factor resonances for dynamic light modulation.
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