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Minimization of Intrinsic Impurity Concentration in ZnGeP2 Single Crystals via Directional Recrystallization
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DOI：10.3390/ijms27114890.png)
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Abstract
En 中文
Zinc germanium phosphide (ZnGeP2) is an important nonlinear crystal for mid-infrared conversion, but its performance is limited by residual absorption and intrinsic impurity phases. In this study, polycrystalline ZnGeP2 was synthesized by a modified two-temperature method, purified by inclined directional recrystallization for up to three cycles, and then grown into single crystals by the vertical Bridgman method. The resulting material was examined by shadow-projection imaging, transmission spectroscopy in the 650–2500 nm range, absorption measurements at 2.097 µm, laser-induced damage threshold (LIDT) testing, and powder X-ray diffraction. Repeated purification improved optical homogeneity and near-infrared transparency, while the absorption coefficient at 2.097 µm decreased from 0.45 to 0.30 cm−1 after three purification cycles. Semi-quantitative PXRD analysis showed progressive suppression of intrinsic impurity phosphides, with phase purity increasing from 86.31% after the first cycle to 95.995% after the second and reaching 100% after the third within the detection limit of the method. However, the LIDT decreased with increasing purification number, indicating a trade-off between lower optical losses and damage resistance. These results demonstrate that inclined directional recrystallization is an effective pre-growth purification route for ZnGeP2 and that the optimal number of purification cycles should be selected according to the intended application.
Keywords:
ZnGeP<sub>2</sub>
chalcopyrite semiconductor
directional recrystallization
pre-growth purification
mid-infrared nonlinear optics
impurity phosphides
laser-induced damage threshold
Journal
IF:
4.9
Papers:
1.9W
Citations:
44.5W
