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Mixed-Phase Engineering in Single Particles for Enhancing Performance of Fe3+ Doped Mg3Ga2GeO8 Phosphors

delete2026-03-17
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PRE
AI
王强 cover
王强 (Qiang Wang)
杨晨 (Yang Chen)
J
Junlin Chen
M
Min Liao
J
Jun Ye
X
Xueyan Wu
M
Miaomiao Feng
C
Chuanlong Xu Shimin Wang
X
Xiaoxiao Huang
J
Jun Wen *
DOI:10.1021/acsami.6c00121delete
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Abstract

Abstract

En 中文
Developing high-efficiency and broadband near-infrared (NIR) phosphors is a core demand in the field of advanced optoelectronics. However, achieving the synergistic improvement of their quantum efficiency and thermal stability remains a critical challenge awaiting breakthrough. In this study, the Mg3Ga2GeO8:Fe3+ phosphor was selected as the research system, and a modification strategy via Al3+ substitution for Ga3+ was proposed. This strategy successfully realized the structural transformation of the material from a single-phase structure to a single-particle multiphase structure, while significantly optimizing its NIR luminescent performance and thermal stability. The single-particle multiphase phosphor obtained via multiphase engineering exhibits excellent quantum yield (92.6%) and thermal stability (89.4%@150 °C). Integrating this single-particle multiphase phosphor with a 365 nm near-ultraviolet chip yielded an NIR phosphor-converted light-emitting diode (pc-LED). The device exhibited a stable NIR output power of 1.97 mW at a working current of 120 mA and possesses biological tissue penetration capability, demonstrating promising application potential in night vision imaging, noninvasive blood vessel visualization, and other fields. This study confirms that inducing the formation of a single-particle multiphase structure via ion substitution is an effective strategy for optimizing the comprehensive performance of Fe3+-doped phosphors, providing important insights for the design and development of high-performance NIR phosphors.
Keywords:
Infrared light
Ions
Luminescence
Phosphors
Sensors
Fe3+-doped phosphors
mixed-phase engineering in single particles
near-infrared luminescence
Al3+ substitution
pc-LED device

Journal

A
ACS Applied Materials & Interfaces
IF:
0
Papers:
65
Citations:
1

Organization

A
anqing normal university
Scholars:
524
Papers: 207
Citations: 0
G
guangdong polytechnic normal university
Scholars:
463
Papers: 246
Citations: 0
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