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Modeling Computer Memory Based on Ferromagnetic/Superconductor Multilayers

delete2019-06-10
delete14
PRE
AI
S
Serhii Shafraniuk *
I
I. P. Nevirkovets
O
Oleg A. Mukhanov
DOI:10.1103/PhysRevApplied.11.064018delete
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Abstract

Abstract

En 中文
A model of superconducting computer memory exploiting the orthogonal spin transfer (OST) in a pseudo-spin-valve (PSV) that is controlled by a three-terminal Josephson superconducting-ferromagnetic transistor (SFT) is developed. The building blocks of the memory are hybrid PSV and SFT structures. The memory model is formulated in terms of the equation-defined PSV and SFT devices integrated into the PSV-SFT-memory-cell (MC) circuit. Logical units 0 and 1 are associated with the two PSV states characterized by two different resistance values. Elementary logical operations comprising the read-write processes occur when a word pulse applied to the SFT's injector coincides with the respective bit pulse acting on the MC. Physically, a word pulse switches the SFT to a resistive state, causing PSV switching between the logical 0 and 1 states. Thus, the whole switching dynamics of the MC depends on the nonequilibrium and nonstationary properties of the PSV and SFT. Modeling of the single MC as well as larger MC-based circuits comprising 12 and 30 elements, respectively, suggests that such memory cells can undergo ultrafast switching (subnanosecond) and have low energy consumption per operation (sub-100 fJ). The model suggested allows the study of the influence of noise, the punch-through effect, cross talk, parasitic effects, etc. The results obtained suggest that the hybrid PSV-SFT structures are well suited to superconducting computing circuits as they are built from magnetic and nonmagnetic transition metals and therefore have low impedances (1-30 Omega).
Keywords:
SIMULATION
DRIVEN
DESIGN
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Physical Review Applied cover
Physical Review Applied
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hypres, inc.
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