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Modelling electrical conduction in nanostructure assemblies through complex networks

delete2020-04-20
delete26
PRE
AI
H
Heming Yao
Y
Ya‐Ping Hsieh *
J
Jing Kong
M
Mario Hofmann *
DOI:10.1038/s41563-020-0664-1delete
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Abstract

Abstract

En 中文
Carrier transport processes in assemblies of nanostructures rely on morphology-dependent and hierarchical conduction mechanisms, whose complexity cannot be captured by current modelling approaches. Here we apply the concept of complex networks to modelling carrier conduction in such systems. The approach permits assignment of arbitrary connectivity and connection strength between assembly constituents and is thus ideal for nanostructured films, composites and other geometries. Modelling of simplified rod-like nanostructures is consistent with analytical solutions, whereas results for more realistic nanostructure assemblies agree with experimental data and reveal conduction behaviour not captured by previous models. Fitting of ensemble measurements also allows the conduction properties of individual constituents to be extracted, which are subsequently used to guide the realization of transparent electrodes with improved performance. A global optimization process was employed to identify geometries and properties with high potential for transparent conductors. Our intuitive discretization approach, combined with a simple solver tool, allows researchers with little computational experience to carry out realistic simulations. A modelling approach based on complex networks is used to simulate carrier transport in assemblies of nanostructures with a broad range of shapes and electrical properties, relevant to the realization of efficient transparent conductors.
Keywords:
TRANSPARENT
PERCOLATION
FILMS
BEHAVIOR
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Journal

Nature Materials cover
Nature Materials
IF:
38.5
Papers:
6.8K
Citations:
11.5W

Organization

U
University of Hong Kong
Scholars:
4.1W
Papers: 3.9W
Citations: 10.1W
A
academia sinica - taiwan
Scholars:
1.9W
Papers: 1.6W
Citations: 17
N
National Taiwan University
Scholars:
4.7W
Papers: 4.2W
Citations: 3.6W
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