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Modified Current Model for ASM-GaN Including Temperature Effect Based on CSWPL Method
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DOI：10.1002/jnm.70126.png)
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Abstract
En 中文
On the basis of the canonical section-wise piecewise linear (CSWPL) technique, this work presents the novel modified drain and gate current models for advanced spice model (ASM) that take temperature effects into account. Compared with the classic ASM current model, the proposed approach incorporates an error-correction module based on the CSWPL technique, providing enhanced prediction accuracy. In addition, temperature dependence is explicitly modeled through a polynomial function, enabling reliable performance across a wide temperature range. To experimentally validate the new model, multi-temperature current measurement data obtained from a 0.25 x 440 mu m(2) gallium-nitride (GaN) high-electron-mobility transistor (HEMT) are used. The achieved results demonstrate that the modified model significantly improves current prediction accuracy compared to the classic current model.
Keywords:
ASM-GaN
CSWPL technique
current model
GaN electronic devices
parameter correction technique
Journal
IF:
1.7
Papers:
85
Citations:
1.3K