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Modulating p–n transition of two-dimensional perovskites for efficient and stable perovskite/Si tandem photovoltaics
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DOI：10.1038/s41566-026-01979-z.png)
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Abstract
En 中文
The popular and effective top-surface mixed-dimensional heterojunction in n–i–p perovskite photovoltaics is frequently ineffective in p–i–n architectures due to the intrinsic p-type character of most reported two-dimensional (2D) or low-dimensional perovskites. Here we deploy electronic engineering to realize the p- to n-type transition in 2D Ruddlesden–Popper perovskites through molecular dipole tuning and chemically designable n-type defects. Parahalogenated piperidine derivatives induce a favourable p- to n-type transition in 2D perovskites, thereby improving energy-level alignment at the perovskite–electron transport layer interface. This tailored band alignment effectively reduces interfacial energy barriers, suppresses non-radiative recombination losses for wide-bandgap perovskites and enhances stability. Notably, p–i–n wide-bandgap (~1.68 eV) perovskite solar cells with an n-type 2D capping layer exhibit more than 100 mV enhancement in open-circuit voltage, resulting in a certified power conversion efficiency of 33.64% when integrated with industrial 110-μm-thick Czochralski heterojunction silicon. Furthermore, such monolithic perovskite/silicon tandem cells retain 92% of their initial efficiency after 1,100 h of continuous operation under maximum-power-point tracking. Our chemical design of p- to n-type transition for 2D perovskite establishes a molecular-level strategy for optimizing interfacial energetics towards high-performance perovskite/silicon tandem photovoltaics. Electronically tunable 2D perovskites optimize charge extraction in wide-bandgap solar cells, enabling perovskite/silicon tandem cells with a certified efficiency of 33.64% and excellent long-term stability.
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