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Monolithically Integrated Circuits from Functional Oxides

delete2013-11-24
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OA
AI
R
Rainer Jany
C
Christoph Richter
C
Carsten Woltmann
G
Georg Pfanzelt
B
Benjamin Förg
M
Marcus Rommel
T
Thomas Reindl
U
Ulrike Waizmann
J
J. Weis
J
Julia A. Mundy
D
David A. Muller
H
Hans Boschker
J
J. Mannhart *
DOI:10.1002/admi.201300031delete
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Abstract

Abstract

En 中文
The rich array of conventional and exotic electronic properties that can be generated by oxide heterostructures is of great potential value for device applications. However, only single transistors bare of any circuit functionality have been realized from complex oxides. Here, monolithically-integrated n-type metal-oxide-semiconductor logic circuits are reported that utilize the two-dimensional electron liquid generated at the LaAlO3/SrTiO3 interface. Providing the capability to process the signals of functional oxide devices such as sensors directly on oxide chips, these results illustrate the practicability and the potential of oxide electronics.
Keywords:
INTERFACE
TRANSISTORS
MOBILITY
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Advanced Materials Interfaces cover
Advanced Materials Interfaces
IF:
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U
University of Augsburg
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Max Planck Society
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Cornell University
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