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Nanoelectronics based on topological structures
DOI:10.1038/s41563-019-0301-z.png)
Abstract
En
Keywords:
DOMAIN-WALLS
SKYRMION LATTICE
CONDUCTION
AI Summary
Key information extracted from the uploaded paper, including a brief overview, abstract, background, key highlights, visual analysis, and future outlook.
Journal
IF:
38.5
Papers:
6.8K
Citations:
11.5W
Organization
No organization information available
Cited Papers
Resonant electron tunnelling assisted by charged domain walls in multiferroic tunnel junctions
NATURE NANOTECHNOLOGY
IF34.9
Neel-type skyrmion lattice with confined orientation in the polar magnetic semiconductor GaV4S8
NATURE MATERIALS
IF38.5

