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Noise reduction in high-density silicon photomultipliers via passive POCl3 doping on trench
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DOI：10.1038/s43246-026-01243-5.png)
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Abstract
En 中文
Deep trench isolation (DTI) is indispensable for suppressing crosstalk and enabling high fill factors in dense silicon photomultipliers (SiPMs). However, plasma-induced sidewall defects create interface states that elevate dark count rate (DCR) and afterpulsing (AP) through generation-recombination and trap-assisted emission. Here, we establish and experimentally validate a quantitative carrier-emission model for DTI sidewall interfaces in SiPMs, linking the emission probability of interface-trapped carriers to the local doping concentration and minority-carrier diffusion length. Conformal POCl3 doping raises the local Fermi level and fills low-energy interface states, suppressing thermionic hole emission while reducing peripheral field crowding. The optimized devices achieve a ~ 67% reduction in primary DCR and a ~ 42% reduction in AP probability, alongside an activation-energy shift from 0.04 eV to 0.49 eV, evidencing a transition from shallow trap-assisted generation to thermally activated emission. Qualitative infrared-pumped electron counting confirms doping-dependent interface-state filling. This trap-filling strategy decouples dark-noise suppression from photon-detection efficiency, offering a scalable pathway to low-noise, high-density SiPMs for applications requiring high sensitivity and precise timing. Deep trench isolation (DTI) is crucial for minimizing crosstalk in silicon photomultipliers (SiPMs), but plasma-induced defects elevate dark count rates and afterpulsing. Here, the authors develop a carrier-emission model for DTI sidewalls, demonstrating that conformal POCl₃ doping significantly reduces noise, offering a scalable solution for high-density, low-noise SiPMs.
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